2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SB1275 features high breakdown voltage.(b vceo = -160v) low collector output capacitance. typ. 30pf at v cb =10v high transition frequency.(f t =50mhz) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -5 v -1.5 a(dc) -3 a(pulse) 1 10 junction temperature t j 150 storage temperature t stg ?55to+150 i c collector current w(tc=25 ) p c collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage b vcbo i c = -50a -160 v collector-emitter breakdown voltage b vceo i c = -1ma -160 v emitter-base breakdown voltage b vebo i e = -50a -5 v collector cutoff current i cbo v cb = -120v -1 a emitter cutoff current i ebo v eb =-4v -1 a collector-emitter saturation voltage v ce(sat) i c /i b = -1a/-0.1a -2 v dc current transfer ratio h fe v ce =-5v,i c = -0.1a 82 180 transition frequency f t v ce =-5v,i e = 0.1a , f = 30mhz 50 mhz output capacitance c ob v cb = -10v , i e =0a , f = 1mhz 30 pf h fe classification type p hfe 82 to 180 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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